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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode
Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. * Guaranteed Performance at 512 MHz, 12.5 Volt Output Power -- 35 Watts Power Gain -- 6.5 dB Min Efficiency -- 50% Min * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * All Gold Metal for Ultra Reliability * Capable of Handling 20:1 Load VSWR, @ 15.5 Volt, 512 MHz, 2 dB Overdrive * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRF5035
35 W, 12.5 VOLTS, 512 MHz N-CHANNEL BROADBAND RF POWER FET
CASE 316-01, STYLE 3
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RJC Symbol Min Typ Value 36 36 20 15 97 0.56 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Max 1.8 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 20 mAdc) Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 36 -- -- -- -- -- -- 5 5 Vdc mAdc Adc (continued) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994
MRF5035 1
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 Vdc, ID = 25 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc ) VGS(th) VDS(on) gfs 1.25 -- 3.2 2.3 -- -- 3.5 0.422 -- Vdc Vdc S
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss -- -- 18 88 197 24 -- -- 29 pF pF pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 35 W, IDQ = 400 mA) Drain Efficiency (VDD = 12.5 Vdc, Pout = 35 W, IDQ = 400 mA) Gps f = 512 MHz f = 175 MHz f = 512 MHz f = 175 MHz No Degradation in Output Power 50 -- 55 55 -- -- 6.5 -- 7.5 12 -- -- % dB
Load Mismatch (VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz, Load VSWR = 20:1, All Phase Angles at Frequency of Test)
R1 VGG R2 C1 +
B1 C2 C3 L1
Socket + R4 B2 C13 C14 VDD
C12 R3 N1 RF Input Z1 C15 Z2 C4 Z3 Z4 C5 C6 C9 C7 DUT C8 L2 Z7 C10 Z8 C11 C16 Z9 N2 RF Output
Components List
B1, B2 C1, C14 C2 C3 C4, C11 C5 C6, C7 C8, C9 C10 C12, C15, C16 C13 L1 L2 Short Ferrite Bead, Fair Rite Products 10 F, 50 V, Electrolytic 1500 pF, Chip Capacitor 140 pF, Chip Capacitor 0-10pF, Trimmer Capacitor 30 pF, Chip Capacitor 43 pF, Chip Capacitor 36 pF, Chip Capacitor 3.6 pF, Chip Capacitor 120 pF, Chip Capacitor 0.1 F, Chip Capacitor 5 Turns, 18 AWG, 0.116 ID 8 Turns, 20 AWG, 0.125 ID N1, N2 R1 R2 R3 R4 Z1, Z9 Z2 Z3 Z4 Z7 Z8 Board Type N Flange Mount 1 k, 1/4 W, Carbon 1 M, 1/4 W, Carbon 100 , 1/4 W, Carbon 110 , 1/4 W, Carbon Transmission Line* Transmission Line* Transmission Line* Transmission Line* Transmission Line* Transmission Line* Glass Teflon(R) 0.060 *See Photomaster for Dimensions
Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic
MRF5035 2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
50 f = 400 MHz Pout , OUTPUT POWER (WATTS) 40 470 MHz Pout , OUTPUT POWER (WATTS) 520 MHz 55 50 45 40 35 30 25 20 15 10 5 0 0 2 4 8 6 10 Pin, INPUT POWER (WATTS) 12 14 6 7 8 9 11 13 10 12 VDD, SUPPLY VOLTAGE (VOLTS) 14 15 16 3W IDQ = 400 mA f = 400 MHz Pin = 10 W 7W 5W
30
20
10 0
VDD = 12.5 V IDQ = 400 mA
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
55 50 Pout , OUTPUT POWER (WATTS) 45 40 35 30 25 20 15 10 5 0 6 7 8 10 11 12 13 VDD, SUPPLY VOLTAGE (VOLTS) 9 14 15 16 3W IDQ = 400 mA f = 520 MHz Pout , OUTPUT POWER (WATTS) Pin = 10 W 7W 5W
50 VDD = 12.5 V Pin = 7 W 40 520 MHz 30 f = 400 MHz
20 Typical Device Shown
10
0
0
1
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Gate Voltage
6 VDS = 10 V 5 I D , DRAIN CURRENT (AMPS) 4 3 2 1 0 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 5 Typical Device Shown C, CAPACITANCE (pF)
400 350 300 250 200 150 100 50 0 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 30 Coss Ciss Crss VGS = 0 V f = 1 MHz
Figure 6. Drain Current versus Gate Voltage
Figure 7. Capacitance versus Voltage
MOTOROLA RF DEVICE DATA
MRF5035 3
TYPICAL CHARACTERISTICS
VGS , GATE-SOURCE VOLTAGE (NORMALIZED) 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 - 25 0 VDD = 12.5 V 0.25 A 25 50 100 75 125 TC, CASE TEMPERATURE (C) 1A 1 150 175 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 TC = 25C 2A IDQ = 5 A 3.5 A I D , DRAIN CURRENT (AMPS) 10
Figure 8. Gate-Source Voltage versus Case Temperature
Figure 9. DC Safe Operating Area
460
520 ZOL*
VDD = 12.5 V, IDQ = 400 mA, Pin = 7.8 W, Tune for Maximum Output Power f (MHz) Zo = 5 400 420 440 460 480 500 520 Zin Zin () 1.0 + j0.89 0.90 + j0.83 0.83 + j0.81 0.82 + j0.83 0.87 + j0.90 0.97 + j1.0 1.1 + j1.2 ZOL* () 0.87 + j2.1 0.79 + j2.2 0.73 + j2.3 0.71 + j2.4 0.71 + j2.5 0.74 + j2.6 0.80 + j2.7
f = 400 MHz Zin 520 460 f = 400 MHz
= Conjugate of source impedance.
ZOL* = Conjugate of the load impedance at given input power, voltage and frequency that produces maximum output power.
Figure 10. Series Equivalent Input and Output Impedance
MRF5035 4
MOTOROLA RF DEVICE DATA
Table 1. Common Source Scattering Parameters (VDS = 12.5 V) ID = 100 mA
f MHz 25 50 100 150 200 300 400 450 500 600 |S11| 0.74 0.74 0.77 0.81 0.85 0.90 0.93 0.94 0.95 0.96 S11 -153 -164 -168 -170 -171 -174 -178 -179 179 176 |S21| 6.9 3.4 1.6 1 0.69 0.38 0.24 0.20 0.17 0.12 S21 94 82 67 56 46 32 22 19 16 13 |S12| 0.039 0.039 0.036 0.032 0.028 0.019 0.013 0.010 0.008 0.008 S12 6 -5 -16 - 25 - 31 - 36 - 30 - 22 -8 27 |S22| 0.87 0.89 0.90 0.92 0.93 0.96 0.97 0.97 0.98 0.98 S22 -169 -174 -176 -178 -179 179 177 175 174 172
ID = 400 mA
f MHz 25 50 100 150 200 300 400 450 500 600 |S11| 0.88 0.88 0.88 0.89 0.89 0.91 0.92 0.93 0.94 0.95 S11 -163 -172 -176 -178 -179 180 178 177 176 174 |S21| 7.8 3.9 1.9 1.3 0.91 0.57 0.39 0.33 0.29 0.22 S21 94 87 77 70 63 51 41 37 33 27 |S12| 0.018 0.018 0.018 0.017 0.016 0.014 0.012 0.012 0.012 0.014 S12 7 3 -1 -2 -1 3 14 22 29 42 |S22| 0.93 0.93 0.94 0.94 0.94 0.95 0.96 0.96 0.97 0.97 S22 -175 -178 -180 179 178 177 175 174 173 171
ID = 1 A
f MHz 25 50 100 150 200 300 400 450 500 600 |S11| 0.92 0.91 0.92 0.92 0.92 0.93 0.94 0.94 0.94 0.95 S11 -165 -173 -177 -179 180 178 176 175 174 173 |S21| 7.8 3.9 1.9 1.3 0.95 0.61 0.43 0.38 0.33 0.26 S21 95 88 81 75 69 59 50 46 43 36 |S12| 0.013 0.013 0.013 0.013 0.012 0.012 0.013 0.013 0.014 0.016 S12 9 6 7 9 12 21 32 37 42 49 |S22| 0.94 0.95 0.95 0.95 0.95 0.96 0.96 0.97 0.97 0.97 S22 -177 -179 179 179 178 176 174 174 173 171
ID = 5 A
f MHz 25 50 100 150 200 300 400 450 500 600 |S11| 0.94 0.94 0.94 0.94 0.94 0.95 0.95 0.95 0.96 0.96 S11 -164 -172 -177 -179 179 177 176 175 174 172 |S21| 7.2 3.6 1.8 1.2 0.89 0.57 0.42 0.36 0.32 0.26 S21 95 89 81 76 70 61 52 48 45 39 |S12| 0.010 0.010 0.010 0.011 0.011 0.011 0.013 0.013 0.014 0.017 S12 10 9 11 16 21 31 41 45 48 54 |S22| 0.95 0.95 0.96 0.96 0.96 0.96 0.97 0.97 0.97 0.97 S22 -178 -180 179 178 177 176 174 173 172 171
MOTOROLA RF DEVICE DATA
MRF5035 5
DESIGN CONSIDERATIONS
The MRF5035 is a common-source, RF power, N-Channel enhancement mode, Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). Motorola RF MOSFETs feature a vertical structure with a planar design. Motorola Application Note AN211A, "FETs in Theory and Practice," is suggested reading for those not familiar with the construction and characteristics of FETs. This device was designed primarily for 12.5 volt VHF and UHF Land Mobile FM power amplifier applications. The major advantages of RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed V ds(on). For MOSFETs, Vds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high, on the order of 109 , resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating - Never exceed the gate voltage rating. Exceeding the rated V GS can result in permanent damage to the oxide layer in the gate region. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating must be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection - These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended with appropriate RF decoupling networks. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (C gd), and gate-to-source (C gs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (C ds ). These capacitances are characterized as input (C iss ), output (C oss ) and reverse transfer (C rss ) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The C iss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications.
Drain
DC BIAS
Cgd Gate Cds Cgs Source Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd
DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, Rds(on), occurs in
Since the MRF5035 is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. See Figure 6 for a typical plot of drain current versus gate voltage. RF power FETs operate optimally with a quiescent drain current (I DQ ), whose value is application dependent. The MRF5035 was characterized at I DQ = 400 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, I DQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws essentially no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system.
MRF5035 6
MOTOROLA RF DEVICE DATA
GAIN CONTROL
Power output of the MRF5035 may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. Figure 5 is an example of output power variation with gate-source bias voltage with Pin held constant. This characteristic is very dependent on frequency and load line. a good first approximation. This is an additional advantage of RF power MOSFETs. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the high gain of the MRF5035 yield a device quite capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. Different stabilizing techniques may be required depending on the desired gain and bandwidth of the application. The RF test fixture implements a resistor in shunt with the gate to improve stability. Two port stability analysis with the MRF5035 S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters," for a discussion of two port network theory and stability.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with bipolar transistors are suitable for the MRF5035. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Both small-signal S-parameters and large-signal impedances are provided. While the S-parameters will not produce an exact design solution for high power operation, they do yield
MOTOROLA RF DEVICE DATA
MRF5035 7
PACKAGE DIMENSIONS
D R
3
F
4 NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES.
K
DIM A B C D E F H J K L N Q R U
1
Q
2
L B J E N H A U C
STYLE 3: PIN 1. 2. 3. 4. SOURCE DRAIN SOURCE GATE
INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57
MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495
CASE 316-01 ISSUE D
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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MRF5035 8
*MRF5035/D*
MRF5035/D MOTOROLA RF DEVICE DATA

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